Patents

US 12772814 B2: Method of forming a metal liner for interconnect structures

Granted
2026-10-20
Filed
2023-04-07 application 18131956
Type
Utility · 15 claims
Elsewhere
Google Patents ↗ · USPTO patent document ↗ · USPTO Patent Center record ↗

Abstract

Methods of forming devices comprise forming a dielectric layer on a substrate, the dielectric layer comprising at least one feature defining a gap including sidewalls and a bottom. The methods include selectively depositing a self-assembled monolayer (SAM) on the bottom of the gap. The SAM has a general formula I to XXIII, wherein R, R′, R1, R2, R3, R4, and R5 are independently selected from hydrogen (H), hydroxy, carbonyl, amino, aminoalkyl, alkyl, alkene, alkyne, and aryl, n is from 0 to 20, m is from 0 to 20, x is from 1 to 2, and y is from 1 to 2. A barrier layer is formed on the SAM before selectively depositing a metal liner on the barrier layer. The SAM is removed after selectively depositing the metal liner on the barrier layer.

Source: PTBLXML, file of 2026-10-20 (ipgb20261020.xml).

Assignees

AssigneeTypePlaceAlso on furp.orgSource
Applied Materials, Inc. 9,683 patentsUS company or organizationSanta Clara, CAPTBLXML, file of 2026-10-20

Inventors

InventorPlacePatentsPerson pageSource
Jesus Candelario Mendoza-GutierrezSan Jose, CAPTBLXML, file of 2026-10-20
Aaron DangerfieldSan Jose, CA11PTBLXML, file of 2026-10-20
Bhaskar Jyoti BhuyanSan Jose, CA79PTBLXML, file of 2026-10-20
Mark SalySanta Clara, CA126PTBLXML, file of 2026-10-20
Yang ZhouMilpitas, CAPTBLXML, file of 2026-10-20
Yong Jin KimAlbany, CA218PTBLXML, file of 2026-10-20
Carmen Leal CervantesMountain View, CA9PTBLXML, file of 2026-10-20
Ge QuSunnyvale, CA5PTBLXML, file of 2026-10-20
Zhiyuan WuSan Jose, CA35PTBLXML, file of 2026-10-20
Feng ChenSan Jose, CAPTBLXML, file of 2026-10-20
Kevin KashefiSanta Clara, CA28PTBLXML, file of 2026-10-20

CPC categories

SubclassCategoryFirst groupSource
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h10H10W20/035PTBLXML, file of 2026-10-20
C23CCoating metallic material; coating material with metallic material; surface treatment of metallic material by diffusion into the surface, by chemical conversion or substitution; coating by vacuum evaporation, by sputtering, by ion implantation or by chemical vapour deposition, in generalC23C16/04PTBLXML, file of 2026-10-20

Cooperative Patent Classification, as currently assigned (one row per subclass).

Assignments and security interests

No recorded assignments or security interests on file for this patent.

USPTO bulk data: PatentsView granted patents, disambiguated (PVGPATDIS) for patents, assignees, inventors, places and CPC categories; the USPTO Patent Assignment Dataset (ECORSEXC) for assignments and security interests. Patents filed in the last 20 years. No claims or full text. Links to other records are by name (and state): EXACT means the identical full name and state; FUZZY means a looser name match, with the confidence shown.