Patents

US 12772772 B2: Mitigation of first wafer effect

Granted
2026-10-20
Filed
2024-05-10 application 18660774
Type
Utility · 17 claims
Elsewhere
Google Patents ↗ · USPTO patent document ↗ · USPTO Patent Center record ↗

Abstract

Embodiments of the disclosure relate to methods for reducing or eliminating the first wafer effect after chamber cleans for plasma etch processes. In some embodiments, the wafer support is maintained at an elevated temperature relative to the etch process. In some embodiments, the etch process is a NF3+NH3 plasma etch to remove native oxides from a silicon substrate.

Source: PTBLXML, file of 2026-10-20 (ipgb20261020.xml).

Assignees

AssigneeTypePlaceAlso on furp.orgSource
Applied Materials, Inc. 9,683 patentsUS company or organizationSanta Clara, CAPTBLXML, file of 2026-10-20

Inventors

InventorPlacePatentsPerson pageSource
Yongqian GaoSunnyvale, CA5PTBLXML, file of 2026-10-20
Michael S. JacksonSunnyvale, CA18PTBLXML, file of 2026-10-20
David T. OrSanta Clara, CA19PTBLXML, file of 2026-10-20
Chun-Chieh WangSunnyvale, CAPTBLXML, file of 2026-10-20
Le ZhangFremont, CAPTBLXML, file of 2026-10-20

CPC categories

SubclassCategoryFirst groupSource
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h10H10P70/20PTBLXML, file of 2026-10-20
H01JElectric discharge tubes or discharge lampsH01J37/321PTBLXML, file of 2026-10-20

Cooperative Patent Classification, as currently assigned (one row per subclass).

Assignments and security interests

No recorded assignments or security interests on file for this patent.

USPTO bulk data: PatentsView granted patents, disambiguated (PVGPATDIS) for patents, assignees, inventors, places and CPC categories; the USPTO Patent Assignment Dataset (ECORSEXC) for assignments and security interests. Patents filed in the last 20 years. No claims or full text. Links to other records are by name (and state): EXACT means the identical full name and state; FUZZY means a looser name match, with the confidence shown.