Patents
US 12772764 B2: Methods of forming conformal silicon oxycarbonitride thin films on high aspect ratio semiconductor structures
- Granted
- 2026-10-20
- Filed
- 2024-03-12 application 18602159
- Type
- Utility · 20 claims
- Elsewhere
- Google Patents ↗ · USPTO patent document ↗ · USPTO Patent Center record ↗
Abstract
Methods of depositing high-quality conformal silicon oxycarbonitride (SiOCN) films in the formation of semiconductor devices are described. The methods include a first deposition cycle comprising exposing a semiconductor substrate in a semiconductor processing chamber to a first precursor, a first purge gas, a second precursor, and a second purge gas to deposit a conformal silicon carbonitride (SiCN) film, wherein the first precursor is a silicon- and carbon-containing precursor, and the second precursor comprises one or more of ammonia (NH3), a diamine (NH2—R—NH2 wherein R is an alkyl group), hydrazine (N2H4), and diazene (N2H2). The conformal silicon carbonitride (SiCN) film is then oxidized to form a conformal silicon oxycarbonitride (SiOCN) film, and the conformal silicon oxycarbonitride (SiOCN) film is thermally annealed to form a high-quality conformal silicon oxycarbonitride (SiOCN) film.
Source: PTBLXML, file of 2026-10-20 (ipgb20261020.xml).
Assignees
| Assignee | Type | Place | Also on furp.org | Source |
|---|---|---|---|---|
| Applied Materials, Inc. 9,683 patents | US company or organization | Santa Clara, CA | PTBLXML, file of 2026-10-20 | |
| National University of Singapore 593 patents | Foreign company or organization | Singapore, SG | PTBLXML, file of 2026-10-20 |
Inventors
| Inventor | Place | Patents | Person page | Source |
|---|---|---|---|---|
| Xinke Wang | Singapore, SG | 12 | PTBLXML, file of 2026-10-20 | |
| Lakmal C. Kalutarage | San Jose, CA | 35 | PTBLXML, file of 2026-10-20 | |
| Bhaskar Jyoti Bhuyan | San Jose, CA | 79 | PTBLXML, file of 2026-10-20 | |
| Mark Saly | Santa Clara, CA | 126 | PTBLXML, file of 2026-10-20 | |
| John Sudijono | Singapore, SG | 34 | PTBLXML, file of 2026-10-20 | |
| SeyedMahmoud Hosseini | Sunnyvale, CA | PTBLXML, file of 2026-10-20 | ||
| Wei Shi | Singapore, SG | PTBLXML, file of 2026-10-20 | ||
| Yuye Kang | Singapore, SG | PTBLXML, file of 2026-10-20 |
CPC categories
| Subclass | Category | First group | Source |
|---|---|---|---|
| H10P | Generic processes or apparatus for the manufacture or treatment of devices covered by class h10 | H10P14/6927 | PTBLXML, file of 2026-10-20 |
| H10D | Inorganic electric semiconductor devices | H10D64/017 | PTBLXML, file of 2026-10-20 |
Cooperative Patent Classification, as currently assigned (one row per subclass).
Assignments and security interests
No recorded assignments or security interests on file for this patent.
USPTO bulk data: PatentsView granted patents, disambiguated (PVGPATDIS) for patents, assignees, inventors, places and CPC categories; the USPTO Patent Assignment Dataset (ECORSEXC) for assignments and security interests. Patents filed in the last 20 years. No claims or full text. Links to other records are by name (and state): EXACT means the identical full name and state; FUZZY means a looser name match, with the confidence shown.