Patents

US 12772755 B2: Contact layer formation with microwave annealing for NMOS devices

Granted
2026-10-20
Filed
2023-11-07 application 18387732
Type
Utility · 20 claims
Elsewhere
Google Patents ↗ · USPTO patent document ↗ · USPTO Patent Center record ↗

Abstract

A method of forming an electrical contact in semiconductor structure includes performing a selective deposition process on a semiconductor structure having a semiconductor region and a dielectric layer having a trench therewithin, the selective deposition process comprising epitaxially forming a contact layer on the semiconductor region within the trench of the dielectric layer, and performing a microwave anneal process to activate dopants in the epitaxially formed contact layer.

Source: PTBLXML, file of 2026-10-20 (ipgb20261020.xml).

Assignees

AssigneeTypePlaceAlso on furp.orgSource
Applied Materials, Inc. 9,683 patentsUS company or organizationSanta Clara, CAPTBLXML, file of 2026-10-20

Inventors

InventorPlacePatentsPerson pageSource
Nicolas Louis BreilSan Jose, CAPTBLXML, file of 2026-10-20
Wolfgang R. AderholdCupertino, CAPTBLXML, file of 2026-10-20
Shashank SharmaFremont, CA101PTBLXML, file of 2026-10-20
Nilay Anil PradhanSanta Clara, CAPTBLXML, file of 2026-10-20

CPC categories

SubclassCategoryFirst groupSource
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h10H10P14/432PTBLXML, file of 2026-10-20
H01JElectric discharge tubes or discharge lampsH01J37/32357PTBLXML, file of 2026-10-20

Cooperative Patent Classification, as currently assigned (one row per subclass).

Assignments and security interests

No recorded assignments or security interests on file for this patent.

USPTO bulk data: PatentsView granted patents, disambiguated (PVGPATDIS) for patents, assignees, inventors, places and CPC categories; the USPTO Patent Assignment Dataset (ECORSEXC) for assignments and security interests. Patents filed in the last 20 years. No claims or full text. Links to other records are by name (and state): EXACT means the identical full name and state; FUZZY means a looser name match, with the confidence shown.