Patents

US 12772487 B2: Gate-tie-down in backside power architecture using contact jumper and backside contact

Granted
2026-10-20
Filed
2023-09-18 application 18469489
Type
Utility · 21 claims
Elsewhere
Google Patents ↗ · USPTO patent document ↗ · USPTO Patent Center record ↗

Abstract

Disclosed are gate-tie-down (GTD) cells that utilize a backside power delivery scheme, where metal wires that deliver power are provided on the back of the die. The backside power may be delivered to the gates through S/Ds and through frontside contacts. As a result, ultra-low height standard cell can be enabled. Also higher area scaling may be achieved. Further, performance and power gain can be maximized.

Source: PTBLXML, file of 2026-10-20 (ipgb20261020.xml).

Assignees

AssigneeTypePlaceAlso on furp.orgSource
QUALCOMM Incorporated 40,593 patentsUS company or organizationSan Diego, CAPTBLXML, file of 2026-10-20

Inventors

InventorPlacePatentsPerson pageSource
Deepak SharmaSan Diego, CA11PTBLXML, file of 2026-10-20
Yan SunSan Diego, CAPTBLXML, file of 2026-10-20
Shreesh NarasimhaCharlotte, NCPTBLXML, file of 2026-10-20

CPC categories

SubclassCategoryFirst groupSource
H10DInorganic electric semiconductor devicesH10D30/6211PTBLXML, file of 2026-10-20

Cooperative Patent Classification, as currently assigned (one row per subclass).

Assignments and security interests

No recorded assignments or security interests on file for this patent.

USPTO bulk data: PatentsView granted patents, disambiguated (PVGPATDIS) for patents, assignees, inventors, places and CPC categories; the USPTO Patent Assignment Dataset (ECORSEXC) for assignments and security interests. Patents filed in the last 20 years. No claims or full text. Links to other records are by name (and state): EXACT means the identical full name and state; FUZZY means a looser name match, with the confidence shown.