Patents
US 12772448 B2: Stairless three-dimensional memory device containing meandering dielectric isolation structure and methods of forming the same
- Granted
- 2026-10-20
- Filed
- 2023-08-31 application 18240560
- Type
- Utility · 12 claims
- Elsewhere
- Google Patents ↗ · USPTO patent document ↗ · USPTO Patent Center record ↗
Abstract
A method includes forming an in-process alternating stack of insulating layers and sacrificial material layers, forming a meandering dielectric isolation structure through the in-process alternating stack, forming memory stack structures through the alternating stack, where each of the memory stack structures includes a respective vertical stack of memory elements and a vertical semiconductor channel, forming sacrificial via fill structures on the respective sacrificial material layers, replacing first portions of the sacrificial material layers with electrically conductive layers, and forming layer contact via structures contacting a respective one of the electrically conductive layers by replacing at least the sacrificial via fill structures with a conductive material portion.
Source: PTBLXML, file of 2026-10-20 (ipgb20261020.xml).
Assignees
| Assignee | Type | Place | Also on furp.org | Source |
|---|---|---|---|---|
| Sandisk Technologies, Inc. 4,933 patents | US company or organization | Milpitas, CA | SANDISK TECHNOLOGIES LLC State business registration FUZZY medium confidence: same name (legal endings aside) and state | PTBLXML, file of 2026-10-20 |
Inventors
| Inventor | Place | Patents | Person page | Source |
|---|---|---|---|---|
| Tomohiro Kubo | Yokkaichi, JP | 43 | PTBLXML, file of 2026-10-20 | |
| Takayuki Maekura | Yokkaichi, JP | 7 | PTBLXML, file of 2026-10-20 |
CPC categories
| Subclass | Category | First group | Source |
|---|---|---|---|
| H10B | Electronic memory devices | H10B43/27 | PTBLXML, file of 2026-10-20 |
| G11C | Static stores | G11C16/0483 | PTBLXML, file of 2026-10-20 |
| H10W | Generic packages, interconnections, connectors or other constructional details of devices covered by class h10 | H10W20/42 | PTBLXML, file of 2026-10-20 |
Cooperative Patent Classification, as currently assigned (one row per subclass).
Assignments and security interests
| Recorded | What | From | To | Reel/frame | Source |
|---|---|---|---|---|---|
| 2025-04-25 | Release of security interest Partial release of security interests | JPMORGAN CHASE BANK, N.A., AS AGENT signed 2025-04-24 | SANDISK TECHNOLOGIES, INC. MILPITAS, CA | 71382/1 | PASDL, file of 2026-10-15 |
Documents recorded with the USPTO Assignment Recordation Branch that list this patent. A security interest is a lender’s claim on the patent as collateral; a release ends it.
USPTO bulk data: PatentsView granted patents, disambiguated (PVGPATDIS) for patents, assignees, inventors, places and CPC categories; the USPTO Patent Assignment Dataset (ECORSEXC) for assignments and security interests. Patents filed in the last 20 years. No claims or full text. Links to other records are by name (and state): EXACT means the identical full name and state; FUZZY means a looser name match, with the confidence shown.