Patents
US 12772440 B2: Method and structure of low-k spacer using post-treatment for memory applications
- Granted
- 2026-10-20
- Filed
- 2024-05-13 application 18662620
- Type
- Utility · 20 claims
- Elsewhere
- Google Patents ↗ · USPTO patent document ↗ · USPTO Patent Center record ↗
Abstract
Exemplary methods of manufacturing 2D DRAM and 3D DRAM devices include etching a portion of a low-k spacer material from a substrate. The methods may include exposing the remaining portion of the low-k spacer material of a 2D DRAM bit line to a carbon-containing precursor, to replenish the carbon content in the low-k spacer material. Additional methods may include exposing the remaining portion of the low-k spacer material of a 3D DRAM word line to a carbon-containing precursor to replenish the carbon content in the low-k spacer material. Further embodiments may include simultaneous treatment with ultraviolet (UV) radiation.
Source: PTBLXML, file of 2026-10-20 (ipgb20261020.xml).
Assignees
| Assignee | Type | Place | Also on furp.org | Source |
|---|---|---|---|---|
| Applied Materials, Inc. 9,683 patents | US company or organization | Santa Clara, CA | PTBLXML, file of 2026-10-20 |
Inventors
| Inventor | Place | Patents | Person page | Source |
|---|---|---|---|---|
| Chang Seok Kang | Santa Clara, CA | 68 | PTBLXML, file of 2026-10-20 | |
| Raghuveer Satya Makala | Campbell, CA | PTBLXML, file of 2026-10-20 | ||
| Fredrick Fishburn | Belmont, CA | 25 | PTBLXML, file of 2026-10-20 | |
| Hsueh Chung Chen | Cohoes, NY | PTBLXML, file of 2026-10-20 | ||
| Balasubramanian Pranatharthiharan | San Jose, CA | 229 | PTBLXML, file of 2026-10-20 |
CPC categories
| Subclass | Category | First group | Source |
|---|---|---|---|
| H10B | Electronic memory devices | H10B12/482 | PTBLXML, file of 2026-10-20 |
Cooperative Patent Classification, as currently assigned (one row per subclass).
Assignments and security interests
No recorded assignments or security interests on file for this patent.
USPTO bulk data: PatentsView granted patents, disambiguated (PVGPATDIS) for patents, assignees, inventors, places and CPC categories; the USPTO Patent Assignment Dataset (ECORSEXC) for assignments and security interests. Patents filed in the last 20 years. No claims or full text. Links to other records are by name (and state): EXACT means the identical full name and state; FUZZY means a looser name match, with the confidence shown.