Patents
US 12772433 B2: Single gate three-dimensional (3D) dynamic random-access memory (DRAM) devices
- Granted
- 2026-10-20
- Filed
- 2023-08-22 application 18236922
- Type
- Utility · 20 claims
- Elsewhere
- Google Patents ↗ · USPTO patent document ↗ · USPTO Patent Center record ↗
Abstract
A memory cell array includes a plurality of memory levels stacked in a first direction, each of the plurality of memory levels including an active region, a cell transistor having a single gate above the active region in the first direction, and a cell capacitor having a bottom electrode layer that is electrically connected to the active region.
Source: PTBLXML, file of 2026-10-20 (ipgb20261020.xml).
Assignees
| Assignee | Type | Place | Also on furp.org | Source |
|---|---|---|---|---|
| Applied Materials, Inc. 9,683 patents | US company or organization | Santa Clara, CA | PTBLXML, file of 2026-10-20 |
Inventors
| Inventor | Place | Patents | Person page | Source |
|---|---|---|---|---|
| Chang Seok Kang | San Jose, CA | 68 | PTBLXML, file of 2026-10-20 | |
| Sung-Kwan Kang | San Jose, CA | 35 | PTBLXML, file of 2026-10-20 |
CPC categories
| Subclass | Category | First group | Source |
|---|---|---|---|
| H10B | Electronic memory devices | H10B12/30 | PTBLXML, file of 2026-10-20 |
Cooperative Patent Classification, as currently assigned (one row per subclass).
Assignments and security interests
No recorded assignments or security interests on file for this patent.
USPTO bulk data: PatentsView granted patents, disambiguated (PVGPATDIS) for patents, assignees, inventors, places and CPC categories; the USPTO Patent Assignment Dataset (ECORSEXC) for assignments and security interests. Patents filed in the last 20 years. No claims or full text. Links to other records are by name (and state): EXACT means the identical full name and state; FUZZY means a looser name match, with the confidence shown.