Patents

US 12751034 B2: Dual-gate semiconductor structures for power applications

Granted
2026-09-29
Filed
2023-12-29 application 18400377
Type
Utility · 22 claims
Elsewhere
Google Patents ↗ · USPTO patent document ↗ · USPTO Patent Center record ↗

Abstract

This disclosure relates to a semiconductor structure and a method for fabrication of semiconductor structures, wherein the semiconductor structure is a quasi-dual-gate field-effect transistor structure having a floating ohmic contact and a field plate. The disclosed semiconductor structure comprises a substrate, a body region over the substrate having a top surface, a source ohmic contact, a drain ohmic contact, and a floating ohmic contact disposed between the source ohmic contact and the drain ohmic contact. The disclosed semiconductor structure further comprises a first dielectric layer disposed over an outermost surface of the body region, and a first gate electrode and a second gate electrode deposited in and around openings in the first dielectric layer and over opposite sides of the floating ohmic contact.

Source: PTBLXML, file of 2026-09-29 (ipgb20260929.xml).

Assignees

AssigneeTypePlaceAlso on furp.orgSource
Qorvo US, Inc. 1,491 patentsUS company or organizationGreensboro, NCQORVO US, INC. Federal lobbying client EXACT high confidence: identical full name and statePTBLXML, file of 2026-09-29

Inventors

InventorPlacePatentsPerson pageSource
Elias ReeseDallas, TX2PTBLXML, file of 2026-09-29
Amin ShahverdiMurphy, TX3PTBLXML, file of 2026-09-29
Nikolaus KlemmerDallas, TX37PTBLXML, file of 2026-09-29

CPC categories

SubclassCategoryFirst groupSource
H10DInorganic electric semiconductor devicesH10D30/475PTBLXML, file of 2026-09-29
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h10H10W74/137PTBLXML, file of 2026-09-29

Cooperative Patent Classification, as currently assigned (one row per subclass).

Assignments and security interests

No recorded assignments or security interests on file for this patent.

USPTO bulk data: PatentsView granted patents, disambiguated (PVGPATDIS) for patents, assignees, inventors, places and CPC categories; the USPTO Patent Assignment Dataset (ECORSEXC) for assignments and security interests. Patents filed in the last 20 years. No claims or full text. Links to other records are by name (and state): EXACT means the identical full name and state; FUZZY means a looser name match, with the confidence shown.