Patents

US 12719426 B2: Field effect transistor (FET) transconductance device with varying gate lengths

Granted
2026-08-25
Filed
2021-12-29 application 18271027
Type
Utility · 19 claims
Elsewhere
Google Patents ↗ · USPTO patent document ↗ · USPTO Patent Center record ↗

Abstract

A field effect transistor (FET) transconductance device with varying gate lengths is disclosed. In one aspect, the varying effective gate lengths are used in a differential architecture to obtain linear even and odd order operation simultaneously. In a particular aspect, the effective gate lengths may be varied according to a differential Multi-Tanh-like architecture. This variation of effective gate lengths enables a compact implementation particularly as compared to varying gate width or emitter areas while also providing linear even and odd order operation simultaneously.

Source: PTBLXML, file of 2026-08-25 (ipgb20260825.xml).

Assignees

AssigneeTypePlaceAlso on furp.orgSource
Qorvo US, Inc. 1,491 patentsUS company or organizationGreensboro, NCQORVO US, INC. Federal lobbying client EXACT high confidence: identical full name and statePTBLXML, file of 2026-08-25

Inventors

InventorPlacePatentsPerson pageSource
Kevin Wesley KobayashiRedondo Beach, CA48PTBLXML, file of 2026-08-25

CPC categories

SubclassCategoryFirst groupSource
H03FAmplifiersH03F3/45183PTBLXML, file of 2026-08-25

Cooperative Patent Classification, as currently assigned (one row per subclass).

Assignments and security interests

No recorded assignments or security interests on file for this patent.

USPTO bulk data: PatentsView granted patents, disambiguated (PVGPATDIS) for patents, assignees, inventors, places and CPC categories; the USPTO Patent Assignment Dataset (ECORSEXC) for assignments and security interests. Patents filed in the last 20 years. No claims or full text. Links to other records are by name (and state): EXACT means the identical full name and state; FUZZY means a looser name match, with the confidence shown.