Patents
US 12435415 B2: Thermal atomic layer deposition of ternary gallium oxide thin films
- Granted
- 2025-10-07
- Filed
- 2021-11-30 application 17538760
- Type
- Utility · 22 claims
- Elsewhere
- Google Patents ↗ · USPTO patent document ↗ · USPTO Patent Center record ↗
Abstract
The present disclosure describes a method of a thermal atomic layer deposition (ALD) process of depositing a ternary gallium oxide thin film, which includes gallium, a metal element other than gallium, and oxygen. The disclosed method starts with providing a reactive surface. Next, one or more ALD growth cycles are conducted. Each ALD growth cycle includes one or more first ALD sub-cycles and one or more second ALD sub-cycles. Herein, conducting each first ALD sub-cycles includes applying a pulse of a first metal precursor and a pulse of water sequentially, where the first metal precursor is a gallium compound. Conducting each second ALD sub-cycles includes applying a pulse of a second metal precursor and a pulse of water sequentially, where the second metal precursor includes the metal element other than gallium.
Source: PVGPATDIS, file of 2026-04-10 (ipg251007.xml).
Assignees
| Assignee | Type | Place | Also on furp.org | Source |
|---|---|---|---|---|
| Illinois Institute of Technology 82 patents | US company or organization | Chicago, IL | Illinois Institute of Technology College or university EXACT high confidence: identical full name and state ILLINOIS INSTITUTE OF TECHNOLOGY Federal lobbying client EXACT high confidence: identical full name and state ILLINOIS INSTITUTE OF TECHNOLOGY Nonprofit EXACT high confidence: identical full name and state | PVGPATDIS, file of 2026-04-10 |
Inventors
| Inventor | Place | Patents | Person page | Source |
|---|---|---|---|---|
| Adam S. Hock | Chicago, IL | 13 | PVGPATDIS, file of 2026-04-10 | |
| Michael James Foody | Chicago, IL | 1 | PVGPATDIS, file of 2026-04-10 |
CPC categories
| Subclass | Category | First group | Source |
|---|---|---|---|
| C23C | Coating metallic material; coating material with metallic material; surface treatment of metallic material by diffusion into the surface, by chemical conversion or substitution; coating by vacuum evaporation, by sputtering, by ion implantation or by chemical vapour deposition, in general | C23C16/45527 | PVGPATDIS, file of 2026-04-10 |
| H01L | Semiconductor devices not covered by class h10 | H01L21/02175 | PVGPATDIS, file of 2026-04-10 |
| H10P | Generic processes or apparatus for the manufacture or treatment of devices covered by class h10 | H10P14/6339 | PVGPATDIS, file of 2026-04-10 |
Cooperative Patent Classification, as currently assigned (one row per subclass).
Assignments and security interests
| Recorded | What | From | To | Reel/frame | Source |
|---|---|---|---|---|---|
| 2021-11-30 | Assignment Assignment of assignor's interest | FOODY, MICHAEL JAMES signed 2021-11-30 HOCK, ADAM signed 2021-11-30 | ILLINOIS INSTITUTE OF TECHNOLOGY CHICAGO, IL | 58247/489 | ECORSEXC, file of 2026-09-25 |
Documents recorded with the USPTO Assignment Recordation Branch that list this patent. A security interest is a lender’s claim on the patent as collateral; a release ends it.
USPTO bulk data: PatentsView granted patents, disambiguated (PVGPATDIS) for patents, assignees, inventors, places and CPC categories; the USPTO Patent Assignment Dataset (ECORSEXC) for assignments and security interests. Patents filed in the last 20 years. No claims or full text. Links to other records are by name (and state): EXACT means the identical full name and state; FUZZY means a looser name match, with the confidence shown.