Patents
US 12184259 B2: Etching and thinning for the fabrication of lithographically patterned diamond nanostructures
- Granted
- 2024-12-31
- Filed
- 2021-09-03 application 17466979
- Type
- Utility · 15 claims
- Elsewhere
- Google Patents ↗ · USPTO patent document ↗ · USPTO Patent Center record ↗
Abstract
A back side of a diamond or other substrate is thinned using plasma etches and a mask situated away from the back side by a spacer having a thickness between 50 μm and 250 μm. Typically, a combined RIE/ICP etch is used to thin the substrate from 20-40 μm to less than 1 μm. For applications in which color centers are implanted or otherwise situated on a front side of the diamond substrate, after thinning, a soft graded etch is applied to reduce color center linewidth, particularly for nitrogen vacancy (NV) color centers.
Source: PVGPATDIS, file of 2026-04-10 (ipg241231.xml).
Assignees
| Assignee | Type | Place | Also on furp.org | Source |
|---|---|---|---|---|
| University of Oregon 77 patents | US company or organization | Eugene, OR | University of Oregon College or university EXACT high confidence: identical full name and state | PVGPATDIS, file of 2026-04-10 |
Inventors
| Inventor | Place | Patents | Person page | Source |
|---|---|---|---|---|
| Ignas Lekavicius | Eugene, OR | 1 | PVGPATDIS, file of 2026-04-10 | |
| Hailin Wang | Eugene, OR | 19 | PVGPATDIS, file of 2026-04-10 |
CPC categories
| Subclass | Category | First group | Source |
|---|---|---|---|
| C30B | Single-crystal growth ; unidirectional solidification of eutectic material or unidirectional demixing of eutectoid material; refining by zone-melting of material ; production of a homogeneous polycrystalline material with defined structure ; single crystals or homogeneous polycrystalline material with defined structure; after-treatment of single crystals or a homogeneous polycrystalline material with defined structure ; apparatus therefor | C30B29/04 | PVGPATDIS, file of 2026-04-10 |
| H03H | Impedance networks, e.g. resonant circuits; resonators | H03H9/02055 | PVGPATDIS, file of 2026-04-10 |
| G03F | Photomechanical production of textured or patterned surfaces, e.g. for printing, for processing of semiconductor devices; materials therefor; originals therefor; apparatus specially adapted therefor; | G03F7/0042 | PVGPATDIS, file of 2026-04-10 |
| G10K | Sound-producing devices; methods or devices for protecting against, or for damping, noise or other acoustic waves in general; acoustics not otherwise provided for | G10K11/162 | PVGPATDIS, file of 2026-04-10 |
| B82Y | Specific uses or applications of nanostructures; measurement or analysis of nanostructures; manufacture or treatment of nanostructures | B82Y20/00 | PVGPATDIS, file of 2026-04-10 |
Cooperative Patent Classification, as currently assigned (one row per subclass).
Assignments and security interests
| Recorded | What | From | To | Reel/frame | Source |
|---|---|---|---|---|---|
| 2024-08-20 | Assignment Assignment of assignor's interest | LEKAVICIUS, IGNAS signed 2024-07-25 WANG, HAILIN signed 2024-07-25 | UNIVERSITY OF OREGON EUGENE, OR | 68341/173 | ECORSEXC, file of 2026-09-25 |
Documents recorded with the USPTO Assignment Recordation Branch that list this patent. A security interest is a lender’s claim on the patent as collateral; a release ends it.
USPTO bulk data: PatentsView granted patents, disambiguated (PVGPATDIS) for patents, assignees, inventors, places and CPC categories; the USPTO Patent Assignment Dataset (ECORSEXC) for assignments and security interests. Patents filed in the last 20 years. No claims or full text. Links to other records are by name (and state): EXACT means the identical full name and state; FUZZY means a looser name match, with the confidence shown.