Patents

US 12095000 B2: Light extraction from optoelectronic device

Granted
2024-09-17
Filed
2020-09-29 application 17035913
Type
Utility · 20 claims
Elsewhere
Google Patents ↗ · USPTO patent document ↗ · USPTO Patent Center record ↗

Abstract

An optoelectronic device configured for improved light extraction through a region of the device other than the substrate is described. A group III nitride semiconductor layer of a first polarity is located on the substrate and an active region can be located on the group III nitride semiconductor layer. A group III nitride semiconductor layer of a second polarity, different from the first polarity, can located adjacent to the active region. A first contact can directly contact the group III nitride semiconductor layer of the first polarity and a second contact can directly contact the group III nitride semiconductor layer of the second polarity. Each of the first and second contacts can include a plurality of openings extending entirely there through and the first and second contacts can form a photonic crystal structure. Some or all of the group III nitride semiconductor layers can be located in nanostructures.

Source: PVGPATDIS, file of 2026-04-10 (ipg240917.xml).

Assignees

AssigneeTypePlaceAlso on furp.orgSource
Sensor Electronic Technology, Inc. 362 patentsUS company or organizationColumbia, SCSENSOR ELECTRONIC TECHNOLOGY, INC. Federal lobbying client EXACT high confidence: identical full name and statePVGPATDIS, file of 2026-04-10

Inventors

InventorPlacePatentsPerson pageSource
Michael ShurVienna, VA346PVGPATDIS, file of 2026-04-10
Grigory SiminColumbia, SC59PVGPATDIS, file of 2026-04-10
Alexander DobrinskyVienna, VA264PVGPATDIS, file of 2026-04-10

CPC categories

SubclassCategoryFirst groupSource
H10HInorganic light-emitting semiconductor devices having potential barriersH10H20/812PVGPATDIS, file of 2026-04-10
G06FElectric digital data processingG06F30/30PVGPATDIS, file of 2026-04-10
H01SDevices using the process of light amplification by stimulated emission of radiation [laser] to amplify or generate light; devices using stimulated emission of electromagnetic radiation in wave ranges other than opticalH01S5/11PVGPATDIS, file of 2026-04-10
H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiationH10F71/1274PVGPATDIS, file of 2026-04-10

Cooperative Patent Classification, as currently assigned (one row per subclass).

Assignments and security interests

No recorded assignments or security interests on file for this patent.

USPTO bulk data: PatentsView granted patents, disambiguated (PVGPATDIS) for patents, assignees, inventors, places and CPC categories; the USPTO Patent Assignment Dataset (ECORSEXC) for assignments and security interests. Patents filed in the last 20 years. No claims or full text. Links to other records are by name (and state): EXACT means the identical full name and state; FUZZY means a looser name match, with the confidence shown.