Patents
US 11840454 B2: Hollow porous silicon-containing structures and method of formation
- Granted
- 2023-12-12
- Filed
- 2021-11-12 application 17525497
- Type
- Utility · 16 claims
- Elsewhere
- Google Patents ↗ · USPTO patent document ↗ · USPTO Patent Center record ↗
Abstract
Methods for synthesis of high surface area porous silicon-based materials and structures that can be formed according to the methods are described. Methods are scalable and capable of producing large quantities of the high surface area materials with high efficiency. The high surface area products can be in the form of a 3D network of interconnected arms or quills with multimodal porosity including high level pores between and among arms, hollow cores of the arms of the network, and pores through the walls of the arms of the network.
Source: PVGPATDIS, file of 2026-04-10 (ipg231212.xml).
Assignees
| Assignee | Type | Place | Also on furp.org | Source |
|---|---|---|---|---|
| Clemson University 122 patents | US company or organization | Clemson, SC | Clemson University State business registration EXACT high confidence: identical full name and state Clemson University College or university EXACT high confidence: identical full name and state | PVGPATDIS, file of 2026-04-10 |
Inventors
| Inventor | Place | Patents | Person page | Source |
|---|---|---|---|---|
| SRIKANTH PILLA | Clemson, SC | 2 | PVGPATDIS, file of 2026-04-10 | |
| Morteza Sabet | Clemson, SC | 1 | PVGPATDIS, file of 2026-04-10 | |
| Apparao M. Rao | Clemson, SC | 6 | PVGPATDIS, file of 2026-04-10 | |
| Nancy H. Chen | Clemson, SC | 14 | PVGPATDIS, file of 2026-04-10 |
CPC categories
| Subclass | Category | First group | Source |
|---|---|---|---|
| C01B | Non-metallic elements; compounds thereof; ; metalloids or compounds thereof not covered by subclass c01c | C01B33/149 | PVGPATDIS, file of 2026-04-10 |
| H01M | Processes or means, e.g. batteries, for the direct conversion of chemical energy into electrical energy | H01M4/386 | PVGPATDIS, file of 2026-04-10 |
| B82Y | Specific uses or applications of nanostructures; measurement or analysis of nanostructures; manufacture or treatment of nanostructures | B82Y30/00 | PVGPATDIS, file of 2026-04-10 |
| C01P | Indexing scheme relating to structural and physical aspects of solid inorganic compounds | C01P2004/45 | PVGPATDIS, file of 2026-04-10 |
| Y02E | Reduction of greenhouse gas [ghg] emissions, related to energy generation, transmission or distribution | Y02E60/10 | PVGPATDIS, file of 2026-04-10 |
Cooperative Patent Classification, as currently assigned (one row per subclass).
Assignments and security interests
| Recorded | What | From | To | Reel/frame | Source |
|---|---|---|---|---|---|
| 2023-07-13 | Assignment Assignment of assignor's interest | CLEMSON UNIVERSITY signed 2023-07-12 | CLEMSON UNIVERSITY RESEARCH FOUNDATION CLEMSON, SC | 64237/248 | ECORSEXC, file of 2026-09-25 |
| 2023-06-30 | Assignment Assignment of assignor's interest | CHEN, NANCY signed 2023-06-27 PILLA, SRIKANTH signed 2023-06-27 SABET, MORTEZA signed 2023-06-27 RAO, APPARAO M. signed 2023-06-29 | CLEMSON UNIVERSITY CLEMSON, SC | 64129/580 | ECORSEXC, file of 2026-09-25 |
Documents recorded with the USPTO Assignment Recordation Branch that list this patent. A security interest is a lender’s claim on the patent as collateral; a release ends it.
USPTO bulk data: PatentsView granted patents, disambiguated (PVGPATDIS) for patents, assignees, inventors, places and CPC categories; the USPTO Patent Assignment Dataset (ECORSEXC) for assignments and security interests. Patents filed in the last 20 years. No claims or full text. Links to other records are by name (and state): EXACT means the identical full name and state; FUZZY means a looser name match, with the confidence shown.