Patents

US 10644144 B2: Growth of cubic crystalline phase structure on silicon substrates and devices comprising the cubic crystalline phase structure

Granted
2020-05-05
Filed
2018-11-14 application 16191197
Type
Utility · 9 claims
Elsewhere
Google Patents ↗ · USPTO patent document ↗ · USPTO Patent Center record ↗

Abstract

A transistor comprises a substrate comprising a Group III/V compound semiconductor material having a cubic crystalline phase structure positioned on a hexagonal crystalline phase layer having a first region and a second region, the cubic crystalline phase structure being positioned between the first region and the second region of the hexagonal crystalline phase layer. A source region and a drain region are both positioned in the Group III/V compound semiconductor material. A channel region is in the Group III/V compound semiconductor material. A gate is over the channel region. An optional backside contact can also be formed. A source contact and electrode are positioned to provide electrical contact to the source region. A drain contact and electrode are positioned to provide electrical contact to the drain region. Methods of forming transistors are also disclosed.

Source: PVGPATDIS, file of 2026-04-10 (ipg200505.xml).

Assignees

AssigneeTypePlaceAlso on furp.orgSource
STC.UNM 475 patentsUS company or organizationAlbuquerque, NMPVGPATDIS, file of 2026-04-10

Inventors

InventorPlacePatentsPerson pageSource
Steven R. J. BrueckAlbuquerque, NM80PVGPATDIS, file of 2026-04-10
Seung-Chang LeeAlbuquerque, NM35PVGPATDIS, file of 2026-04-10
Christian WetzelTroy, NY7PVGPATDIS, file of 2026-04-10
Mark DurniakTroy, NY6PVGPATDIS, file of 2026-04-10

CPC categories

SubclassCategoryFirst groupSource
H10DInorganic electric semiconductor devicesH10D30/4755PVGPATDIS, file of 2026-04-10
H01LSemiconductor devices not covered by class h10H01L21/02381PVGPATDIS, file of 2026-04-10
H01SDevices using the process of light amplification by stimulated emission of radiation [laser] to amplify or generate light; devices using stimulated emission of electromagnetic radiation in wave ranges other than opticalH01S5/3203PVGPATDIS, file of 2026-04-10
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h10H10P14/2905PVGPATDIS, file of 2026-04-10
H10HInorganic light-emitting semiconductor devices having potential barriersH10H20/01335PVGPATDIS, file of 2026-04-10

Cooperative Patent Classification, as currently assigned (one row per subclass).

Assignments and security interests

RecordedWhatFromToReel/frameSource
2022-09-20Assignment
Assignment of assignor's interest
WETZEL, CHRISTIAN signed 2019-04-18
DURNIAK, MARK signed 2019-05-10
RENSSELAER POLYTECHNIC INSTITUTE TROY, NY61151/699ECORSEXC, file of 2026-09-25

Documents recorded with the USPTO Assignment Recordation Branch that list this patent. A security interest is a lender’s claim on the patent as collateral; a release ends it.

USPTO bulk data: PatentsView granted patents, disambiguated (PVGPATDIS) for patents, assignees, inventors, places and CPC categories; the USPTO Patent Assignment Dataset (ECORSEXC) for assignments and security interests. Patents filed in the last 20 years. No claims or full text. Links to other records are by name (and state): EXACT means the identical full name and state; FUZZY means a looser name match, with the confidence shown.