Patents

US 12772480 B2: III-nitride vertical hot electron transistor with polarization doping and collimated injection

Granted
2026-10-20
Filed
2023-08-02 application 18229542
Type
Utility · 20 claims
Elsewhere
Google Patents ↗ · USPTO patent document ↗ · USPTO Patent Center record ↗

Abstract

III-nitride-based hot electron transistors (HETs) offer significant promise as high-speed, high-power devices, but their performance has been limited to below that of competing technologies. A HET with collector current density>440 kA/cm2 and common-emitter current gain>75 is disclosed. Polarization engineering of the emitter stack was used to allow for high-current collimated electron injection from the emitter with relatively low turn-on voltage. The use of only polarization charge in the undoped 10 nm-thick base allowed for high gain, through minimization of scattering, with atomic layer etching contact fabrication used to lower base access resistance.

Source: PTBLXML, file of 2026-10-20 (ipgb20261020.xml).

Assignees

AssigneeTypePlaceAlso on furp.orgSource
Massachusetts Institute of Technology 5,106 patentsUS company or organizationCambridge, MAMassachusetts Institute of Technology College or university EXACT high confidence: identical full name and state
MASSACHUSETTS INSTITUTE OF TECHNOLOGY Nonprofit EXACT high confidence: identical full name and state
PTBLXML, file of 2026-10-20
Brown University 276 patentsUS company or organizationProvidence, RIBrown University College or university EXACT high confidence: identical full name and statePTBLXML, file of 2026-10-20

Inventors

InventorPlacePatentsPerson pageSource
Jeffrey William DaultonCambridge, MAPTBLXML, file of 2026-10-20
Alexander ZaslavskyProvidence, RIPTBLXML, file of 2026-10-20

CPC categories

SubclassCategoryFirst groupSource
H10DInorganic electric semiconductor devicesH10D30/47PTBLXML, file of 2026-10-20

Cooperative Patent Classification, as currently assigned (one row per subclass).

Assignments and security interests

No recorded assignments or security interests on file for this patent.

USPTO bulk data: PatentsView granted patents, disambiguated (PVGPATDIS) for patents, assignees, inventors, places and CPC categories; the USPTO Patent Assignment Dataset (ECORSEXC) for assignments and security interests. Patents filed in the last 20 years. No claims or full text. Links to other records are by name (and state): EXACT means the identical full name and state; FUZZY means a looser name match, with the confidence shown.